document number: 83717 www.vishay.com revision 17-august-01 2?3 description this data sheet presents ?e families of vishay industry standard single channel phototransistor couplers. these families include the 4n25/26/27/28 types, the 4n35/36/37/38 couplers, the h11a1/a2/ a3/a4/a5, the mct2/2e, and mct270/271/272/273/274/275/276/ 277 devices.each optocoupler consists of gallium arsenide infra- red led and a silicon npn phototransistor. these couplers are underwriters laboratories (ul) listed to comply with a 5300 v rms isolation test voltage. this isolation performance is accomplished through vishay double molding isolation manufac- turing process. compliance to vde 0884 partial discharge isolation speci?ation is available for these families by ordering option 1. phototransistor gain stability, in the presence of high isolation volt- ages, is insured by incorporating a transparent lon shield (trios) on the phototransistor substrate. these isolation pro- cesses and the vishay is09001 quality program results in the high- est isolation performance available for a commercial plastic phototransistor optocoupler. the devices are available in lead formed con?uration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3 9 .300 .347 (7.62 8.81) 4 typ. 1 2 3 6 5 4 base collector emitter anode cathode nc dimensions in inches (mm) device types part no. ctr % min. part no. ctr % min. 4n25 20 mct2 20 4n26 20 mct2e 20 4n27 10 mct270 50 4n28 10 mct271 45 90 4n35 100 mct272 75 150 4n36 100 mct273 125 250 4n37 100 mct274 225 400 4n38 10 mct275 70 90 h11a1 50 mct276 15 60 H11A2 20 mct277 100 h11a3 20 h11a4 10 h11a5 30 features interfaces with common logic families input-output coupling capacitance < 0.5 pf industry standard dual-in-line 6-pin package field effect stable by trios 5300 v rms isolation test voltage underwriters laboratory file #e52744 vde #0884 app roval available with option 1 applications ac mains detection reed relay driving switch mode power supply feedback telephone ring detection logic ground isolation logic coupling with high frequency noise rejection notes: designing with data sheet is covered in application note 45. v de phototransistor industry sta ndard single channel 6 pin dip optocoupler .com .com .com .com 4 .com u datasheet
document number: 83717 www.vishay.com revision 17-august-01 2 54 maximum ratings t a =25 c emitter reverse voltage .......................................................................................... 6.0 v forward current ........................................................................................ 60 ma surge current (t 10 s)............................................................................... 2.5 a power dissipation................................................................................... 100 mw detector collector-emitter breakdown voltage........................................................... 70 v emitter-base breakdown voltage ................................................................ 7.0 v collector current ....................................................................................... 50 ma collector current(t <1.0 ms).................................................................... 100 ma power dissipation................................................................................... 150 mw package isolation test voltage.......................................................................... 5300 v rms creepage .............................................................................................. 7.0 mm clearance ............................................................................................. 7.0 mm isolation thickness between emitter and detector ............................... 0.4 mm comparative tracking index per din iec 112/vde0303, part 1 .................. 175 isolation resistance v io =500 v, t a =25 c...............................................................................10 12 ? v io =500 v, t a =100 c............................................................................ 10 11 ? storage temperature................................................................ 55 c to +150 c operating temperature ............................................................ 55 c to +100 c junction temperature................................................................................ 100 c soldering temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) ...................................................... 260 c 4n25/26/27/28?haracteristics t a =25 c * indicates jedec registered values emitter symbol min. typ. max. unit condition forward voltage* v f 1.3 1.5 v i f =50 ma reverse current* i r 0.1 100 a v r =3.0 v capacitance c o 25 pf v r =0 detector breakdown voltage* collector-emitter bv ceo 30 v i c =1.0 ma emitter-collector bv eco 7.0 i e =100 a collector-base bv cbo 70 i c =100 a i ceo (dark)* 4n25/26/27 4n28 5.0 10 50 100 na v ce =10 v, (base open) i cbo (dark)* 2.0 20 na v cb =10 v, (emitter open) capacitance, collector-emitter c ce 6.0 pf v ce =0 package dc current transfer ratio* 4n25/26 ctr 20 50 % v ce =10 v, i f =10 ma 4n27/28 10 30 isolation voltage* 4n25 v io 2500 v peak, 60 hz 4n26/27 1500 4n28 500 saturation voltage, collector-emitter v ce(sat) 0.5 v i ce =2.0 ma, i f =50 ma resistance, input to output* r io 100 g ? v io =500 v coupling capacitance c io 0.5 pf f=1.0 mhz rise and fall times t r , t f 2.0 s i f =10 ma v ce =10 v, r l =100 ? .com .com .com .com .com 4 .com u datasheet
document number: 83717 www.vishay.com revision 17-august-01 2 55 4n35/36/37/38?haracteristics t a =25 c * indicates jedec registered value h11a1 through h11a5?haracteristics t a =25 c emitter symbol min. typ. max. unit condition forward voltage* v f 0.9 1.3 1.5 1.7 v i f =10 ma i f =10 ma, t a = 55 c reverse current* i r 0.1 10 a v r =6.0 v capacitance c o 25 pf v r =0, f=1.0 mhz detector breakdown voltage, collector-emitter* 4n35/36/37 bv ceo 30 v i c =1.0 ma 4n38 80 breakdown voltage, emitter-collector* bv eco 7.0 v i e =100 a breakdown voltage, collector-base* 4n35/36/37 bv cbo 70 v i c =100 a, i b =1.0 a 4n38 80 leakage current, collector-emitter* 4n35/36/37 i ceo 5.0 50 na v ce =10 v, i f =0 4n38 50 v ce =60 v, i f =0 leakage current, collector-emitter* 4n35/36/37 i ceo 500 a v ce =30 v, i f =0, t a =100 c 4n38 6.0 v ce =60 v, i f =0, t a =100 c capacitance, collector-emitter c ce 6.0 pf v ce =0 package dc current transfer ratio* 4n35/36/37 ctr 100 % v ce =10 v, i f =10 ma, 4n38 20 v ce =1.0 v, i f =20 ma dc current transfer ratio* 4n35/36/37 ctr 40 50 % v ce =10 v, i f =10 ma, t a = 55 to 100 c 4n38 30 resistance, input to output* r io 10 11 ? v io =500 v coupling capacitance c io 0.5 pf f=1.0 mhz switching time* t on , t off 10 s i c =2.0 ma, r l =100 ?, v cc =10 v emitter symbol min. typ. max. unit condition forward voltage h11a1 h11a4 v f 1.1 1.5 v i f =10 ma h11a5 1.1 1.7 reverse current i r 10 a v r =3.0 v capacitance c 0 50 pf v r =0, f=1.0 mhz detector breakdown voltage, collector-emitter bv ceo 30 v i c =1.0 ma, i f =0 ma breakdown voltage, emitter-collector bv eco 7.0 v i e =100 a, i f =0 ma breakdown voltage, collector-base bv cbo 70 v i c =10 a, i f =0 ma leakage current, collector-emitter i ceo 5.0 50 na v ce =10 v, i f =0 ma capacitance, collector-emitter c ce 6.0 pf v ce =0 package dc current transfer ratio h11a1 ctr 50 % v ce =10 v, i f =10 ma H11A2/3 20 h11a4 10 h11a5 30 saturation voltage, collector-emitter v ce sat 0.4 v i ce =0.5 ma, i f =10 ma capacitance, input to output c io 0.5 pf switching time t on , t off 3.0 s i c =2.0 ma, r l =100 ?, v ce =10 v .com .com .com .com .com 4 .com u datasheet
document number: 83717 www.vishay.com revision 17-august-01 2 56 mct2/mct2e?haracteristics t a =25 c mct270 through mct277?haracteristics t a =25 c emitter symbol min. typ. max. unit condition forward voltage v f 1.1 1.5 v i f =20 ma reverse current i r 10 a v r =3.0 v capacitance c o 25 pf v r =0, f=1.0 mhz detector breakdown voltage collector-emitter bv ceo 30 v i c =1.0 ma, i f =0 ma emitter-collector bv eco 7.0 i e =100 a, i f =0 ma collector-base bv cbo 70 i c =10 a, i f =0 ma leakage current collector-emitter i cbo 5.0 50 na v c e =10 v, i f =0 collector-base i cbo 20 capacitance, collector-emitter c ce 10 pf v ce =0 package dc current transfer ratio ctr 20 60 % v ce =10 v, i f =10 ma capacitance, input to output c i o 0.5 pf resistance, input to output r io 100 g ? switching time t on , t off 3.0 s i c =2.0 ma, r l =100 ?, v ce =10 v emitter symbol min. typ. max. unit condition forward voltage v f 1.5 v i f =20 ma reverse current i r 10 a v r =3.0 v capacitance c o 25 pf v r =0, f=1.0 mhz detector breakdown voltage collector-emitter bv ceo 30 v i c =10 a, i f =0 ma emitter-collector bv eco 7.0 i e =10 a, i f =0 ma collector-base bv cbo 70 i c =10 a, i f =0 ma leakage current, collector-emitter i ceo 50 na v ce =10 v, i f =0 ma package dc current transfer ratio mct270 ctr 50 % v ce =10 v, i f =10 ma mct271 45 90 mct272 75 150 mct273 125 250 mct274 225 400 mct275 70 210 mct276 15 60 mct277 100 current transfer ratio, collector emitter mct271 276 ctr ce 12.5 % v ce =0.4 v, i f =16 ma mct277 40 collector emitter saturation voltage v ce sat 0.4 v i ce =2.0 ma, i f =16 ma capacitance, input to output c io 0.5 pf resistance, input to output r io 10 12 ? v io =500 vdc switching time mct270/272 t on , t off 10 s i c =2.0 ma, r l =100 ? , v ce =5.0 v mct271 7.0 mct273 20 mct274 25 mct275/277 15 mct276 3.5 .com .com .com .com .com 4 .com u datasheet
document number: 83717 www.vishay.com revision 17-august-01 2 57 figure 1. forward voltage vs. forward current figure 2. normalized non-saturated and saturated ctr, t a =25 c vs. led current figure 3. normalized non-saturated and saturated ctr, t a =50 c vs. led current 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = ?5 c t a = 25 c t a = 85 c normalized to: 0.0 0.5 1.0 1.5 0 1 10 100 i f - led current - ma nctr nctr(sat) nctr - normlized ctr ctrce(sat) vce=0.4 v vce=10 v, i f =10 ma, t a =25 c t a =25 c 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr - normalized ctr normalized to: ctrce(sat) vce=0.4 v vce=10 v, i f =10 ma, t a =25 c nctr nctr(sat) t a =50 c figure 4. normalized non-saturated and saturated ctr, t a =70 c vs. led current figure 5. normalized non-saturated and saturated ctr, t a =85 c vs. led current figure 6. collector-emitter current vs. temperature and led current 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr - normalized ctr normalized to: ctrce(sat) vce=0.4 v vce=10 v, i f =10 ma, t a =25 c nctr nctr(sat) t a =70 c 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr - normalized ctr normalized to: ctrce(sat) vce = 0.4 v vce=10 v, i f =10 ma, t a =25 c nctr nctr(sat) t a =85 c 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 85 c i f - led current - ma ice - collector current - ma 25 c .com .com .com .com .com 4 .com u datasheet
document number: 83717 www.vishay.com revision 17-august-01 2 58 figure 7. collector-emitter leakage current vs. temp. figure 8. normalized ctrcb vs. led current and temp. figure 9. normalized photocurrent vs. i f and temp. 100 80 60 40 20 0 20 10 10 10 10 10 10 10 10 2 1 0 1 2 3 4 5 t a - ambient temperature - c iceo - collector-emitter - na typical v ce = 10 v normalized to: 0.0 0.5 1.0 1.5 25 c 50 c 70 c i f - led current - ma nctrcb - normalized ctrcb .1 1 10 100 vcb=9.3 v, i f =10 ma, t a =25 c normalized to: 0.01 0.1 1 10 i f - led current - ma normalized photocurrent .1 1 10 100 i f =10 ma, t a =25 c nib, t a = 20 c nib, t a =25 c nib, t a = 50 c nib, t a =70 c figure 10. normalized non-saturated hfe vs. base current and temperature figure 11. normalized hfe vs. base current and temp. figure 12. propagation delay vs. collector load resistor normalized to: 0.4 0.6 0.8 1.0 1.2 ib - base current - a 1 10 100 1000 ib=20 a, vce=10 v, t a =25 c 25 c 50 c 70 c 20 c nhfe - normalized hfe 0.0 0.5 1.0 1.5 25 c 20 c 50 c 70 c nhfe(sat) - normalized saturated hfe 1 10 100 1000 vce=10 v, ib=20 a t a =25 c vce=0.4 v ib - base current - a normalized to: 1 10 100 1000 rl - collector load resistor - k ? t plh - propagation delay - s 2.5 2.0 1.5 1.0 t phl - propagation delay - s .1 1 10 100 i f =10 ma, t a =25 c v cc =5.0 v, vth=1.5 v t plh t phl figure 13. switching timing i f t r =1.5 v v o t d t s t f t phl t plh v th figure 14. switching schematic v cc = 5.0 v f=10 khz, df=50% r l v o i f =1 0 ma .com .com .com .com 4 .com u datasheet
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